feb.1999 mitsubishi semiconductor high-speed switching thyristor ? CR10CY medium power, inverter use non-insulated type, glass passivation type CR10CY application inverter, dc choppers, dc static switches, pulse generator symbol v rrm v rsm v drm v dsm parameter repetitive peak reverse voltage non-repetitive peak reverse voltage repetitive peak off-state voltage non-repetitive peak off-state voltage voltage class unit v v v v 8 400 500 400 500 12 600 720 600 720 symbol i t (rms) i t (av) i tsm i 2 t di/dt p gm p g (av) v fgm v rgm i fgm t j t stg parameter rms on-state current average on-state current surge on-state current i 2 t for fusing critical rate of rise of on-state current peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature mounting torque weight conditions commercial frequency, sine half wave, 180 c conduction, t c =66 c 60hz sine half wave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current v d =1/2v drm , i tm =30a, i g =0.1a, t c =25 c, f=60hz typical value unit a a a a 2 s a/ m s w w v v a c c kgcm nm g ratings 15.5 10 200 165 100 5.0 0.5 10 5 2 C30 ~ +125 C30 ~ +125 30 2.94 8.8 maximum ratings ?i t (av) ......................................................................... 10a ?v drm ..............................................................400v/600v ?i gt ..........................................................................40ma (16.2) 1.9 min 10 max 1 2 3 1
2
3 cathode anode gate outline drawing dimensions in mm f 2.0 min m6 1 14 f 8.7 max 3 min 19.5 max 26 max lock washer m6 brass nut m6 1 note: mica washer and spacer are provided only upon request. solderless terminal telegraph wire 1.04~2.63mm 2 ? ? ? mica washer f 32 f 6 t0.25 spacer f 9 f 6.2 t1 3 2 1 11 max
feb.1999 mitsubishi semiconductor high-speed switching thyristor ? CR10CY medium power, inverter use non-insulated type, glass passivation type electrical characteristics test conditions t j =125 c, v rrm applied t j =125 c, v drm applied t c =25 c, i tm =30a, instantaneous value t j =125 c, v d =2/3v drm t j =25 c, v d =6v, i t =0.5a t j =125 c, v d =1/2v drm t j =25 c, v d =6v, i t =0.5a t j =25 c, v d =100v, i t =10a, i g =0.1a i t =10a, v r =50v, v d =1/2v drm , t j =125 c, dv/dt=20v/ m s junction to case case to fin, greased unit ma ma v v/ m s v v ma m s m s c/w c/w typ. symbol i rrm i drm v tm dv/dt v gt v gd i gt t gt t q r th (j-c) r th (c-f) parameter repetitive peak reverse current repetitive peak off-state current on-state voltage critical rate of rise of off-state voltage gate trigger voltage gate non-trigger voltage gate trigger current turn-on time turn-off time thermal resistance contact thermal resistance limits min. 100 0.25 max. 4.0 4.0 2.5 2.5 40 10 15 2.0 0.55 10 0 23 5710 1 80 40 23 5710 2 44 120 160 200 60 20 100 140 180 0 1.5 2.0 2.5 3.0 3.5 4.0 1.0 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t c = 125? t c = 25? maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) performance curves
feb.1999 mitsubishi semiconductor high-speed switching thyristor ? CR10CY medium power, inverter use non-insulated type, glass passivation type 23 10 ? 5710 ? 23 5710 ? 23 5710 ? 0 0.4 0.8 1.6 2.0 2.4 1.2 23 10 ? 5710 0 10 ? 23 10 1 5710 2 23 5710 3 23 5710 4 10 1 7 5 3 2 10 0 7 5 3 2 7 5 3 2 v gt = 2.5v p gm = 5w v gd = 0.25v v fgm = 10v i fgm = 2a p g(av) = 0.5w i gt t j = 125? 25? 30? maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (?) average on-state current (a) allowable case temperature vs. average on-state current (single-phase half wave) case temperature (?) average on-state current (a) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance (?/ w) time (s) gate characteristics gate voltage (v) gate current (ma) maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) 10 5 1 0 234 6789 160 120 100 60 20 0 40 80 140 q = 180 q = 90 q 360 resistive, inductive loads natural convection 160 160 t4 120 120 t3 aluminum plate painted black and greased 40 30 15 10 5 35 25 20 0 0 16 8 2 4 6 10 12 14 q 360 resistive, inductive loads q = 30 60 120 90 180 160 120 60 40 20 140 100 80 0 0 16 8 2 4 6 10 12 14 q = 30 60 120 90 180 q 360 resistive, inductive loads 40 30 15 10 5 35 25 20 0 16 0 60 120 90 180 8 2 4 6 10 12 14 q q 360 resistive loads q = 30
feb.1999 mitsubishi semiconductor high-speed switching thyristor ? CR10CY medium power, inverter use non-insulated type, glass passivation type 20 10 0 0 20 40 60 120 160 80 100 30 40 50 60 70 80 90 100 140 i t = 10a, tw = 100? di/dt = ?a/? v r = 50v, v d = 1/2v drm dv/dt = 20v/? typical example 40 30 15 10 5 35 25 20 0 0 8 2 4 6 10 12 14 16 270 dc q = 30 120 90 q 360 60 180 resistive, inductive loads 160 120 60 40 20 140 100 80 0 0 8 2 4 6 10 12 14 16 q q 360 q = 30 60 120 90 180 resistive loads 160 120 60 40 20 140 100 80 0 0 8 2 4 6 10 12 14 16 q q 360 90 q = 180 resistive loads natural convection 160 160 t4 120 120 t3 aluminum plate painted black and greased allowable ambient temperature vs. average on-state current (single-phase full wave) ambient temperature (?) average on-state current (a) maximum average power dissipation (rectangular wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (rectangular wave) ambient temperature (?) average on-state current (a) allowable case temperature vs. average on-state current (rectangular wave) case temperature (?) average on-state current (a) allowable case temperature vs. average on-state current (single-phase full wave) case temperature (?) average on-state current (a) 160 120 60 40 20 140 100 80 0 0 8 2 4 6 10 12 14 16 q 360 resistive, inductive loads q = 30 60 120 180 270 dc 90 160 120 60 40 20 140 100 80 0 0 8 2 4 6 10 12 14 16 160 160 t4 120 120 t3 aluminum plate painted black and greased 90 dc q = 180 q 360 resistive, inductive loads natural convection turn-off time vs. junction temperature junction temperature (?) 100 (%) turn-off time ( t j = t c ) turn-off time ( t j = 125 ? )
feb.1999 mitsubishi semiconductor high-speed switching thyristor ? CR10CY medium power, inverter use non-insulated type, glass passivation type 160 120 60 40 20 140 100 80 0 0 8 2 4 6 10 12 14 16 t j = 125? tw = 100? di/dt = 8a/? v r = 50v, v d = 1/2v drm dv/dt = 20v/? typical example turn-off time vs. on-state current on-state current (a) 100 (%) turn-off time ( i t = ia ) turn-off time ( i t = 10a )
|
